Electron beam resist system ― A critical review of recent developmentsWATTS, M. P. C.Solid state technology. 1984, Vol 27, Num 2, pp 111-113, issn 0038-111XArticle

Plasma-developable electron-beam resistsYONEDA, Y; FUKUYAMA, S.-I.Fujitsu scientific and technical journal. 1987, Vol 23, Num 1, pp 37-43, issn 0016-2523Article

POSITIVE RESIST MATERIAL REQUIREMENTS FOR VLSI DEVICE FABRICATION. IIELLIOTT DJ.1982; SOLID STATE TECHNOLOGY; ISSN 0038-111X; USA; DA. 1982; VOL. 25; NO 12; PP. 91-95; BIBL. 11 REF.Article

ELIMINATION DES IMPURETES MINERALES DES RESISTANCES PHOTOSENSIBLES PAR LA CATIONITE KU-2 X 8MIRONOV MS; TAUSHKANOV VP; MARKOVA TP et al.1981; Z. PRIKL. HIM.; ISSN 0044-4618; SUN; DA. 1981; VOL. 54; NO 10; PP. 2321-2323; BIBL. 3 REF.Article

Bake effects in positive photoresistBATCHELDER, T; PIATT, J.Solid state technology. 1983, Vol 26, Num 8, pp 211-217, issn 0038-111XArticle

CHARACTERIZATION OF AZ-2415 AS A NEGATIVE ELECTRON RESISTBERKER TD; CASEY DD.1982; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1982; VOL. 17; NO 2; PP. 154-160; BIBL. 7 REF.Article

Positive photoresist polymerization through pulsed photomagnetic curingRUGGERIO, P. A.Solid state technology. 1984, Vol 27, Num 3, pp 165-169, issn 0038-111XArticle

CHARACTERIZATION OF POSITIVE RESIST DEVELOPMENTO'TOOLE MM; GRANDE WJ.1981; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1981; VOL. 2; NO 12; PP. 311-313; BIBL. 8 REF.Article

OPTICAL REQUIREMENTS FOR PROJECTION LITHOGRAPHYOLDHAM WG; SUBRAMANIAN S; NEUREUTHER AR et al.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 10; PP. 975-980; BIBL. 17 REF.Article

Effect of surfactant-added developer on development of chemically amplified photoresistKAWADA, Satoshi; TAMAI, Yukio; OMAE, Shunkichi et al.SPIE proceedings series. 2000, pp 717-725, isbn 0-8194-3617-8Conference Paper

Focused ion beam lithography using Novolak-based resistKOJIMA, Y; OCHIAI, Y; MATSUI, S et al.Japanese journal of applied physics. 1988, Vol 27, Num 9, pp L1780-L1782, issn 0021-4922, 2Article

Deep UV photolighographic systems and processesWILKINS, C. W. JR; REICHMANIS, E; CHANDROSS, E. A et al.Polymer engineering and science. 1983, Vol 23, Num 18, pp 1025-1028, issn 0032-3888Article

Azide-phenolic resin UV resist (MRL) for microlithographyIWAYANAGI, T; HASHIMOTO, M; NONOGAKI, S et al.Polymer engineering and science. 1983, Vol 23, Num 17, pp 935-940, issn 0032-3888Article

DETAILED CONTRAST (GAMMA -VALUE) MEASUREMENTS OF POSITIVE ELECTRON RESISTSHARADA K; TAMAMURA T; KOGURE O et al.1982; JOURNAL OF THE ELECTROCHEMICAL SOCIETY; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 11; PP. 2576-2580; BIBL. 10 REF.Article

A new negative working resist for UV light lithographyNAKANE, H; YOKOTA, A; YAMAMOTO, S et al.Polymer engineering and science. 1983, Vol 23, Num 18, pp 1050-1053, issn 0032-3888Article

PROFILE SIMULATION OF NEGATIVE RESIST MRS USING THE SAMPLE PHOTOLITHOGRAPHY SIMULATORMATSUZAWA T; KISHIMOTO A; TOMIOKA H et al.1982; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 3; PP. 58-60; BIBL. 6 REF.Article

DEEP UV1:1 PROJECTION LITHOGRAPHY UTILIZING NEGATIVE RESIST MRSMATSUZAWA T; TOMIOKA H.1981; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 11; PP. 1284-1288; BIBL. 8 REF.Article

Negative X-ray resist produced by proton bombardmentGECIM, H. S; HOWE, R; MCGOWAN, J. W et al.Electronics Letters. 1984, Vol 20, Num 14, pp 598-599, issn 0013-5194Article

Design of a positive resist for projection lithography in the mid-UVWILLSON, G; MILLER, R; MCKEAN, D et al.Polymer engineering and science. 1983, Vol 23, Num 18, pp 1004-1011, issn 0032-3888Article

Le point sur les résines utilisables en microlithographie = Resins for microlithographySERRE, B; SCHUE, F; MONTGINOUL, C et al.L' Actualité chimique (Paris. 1973). 1985, Num 9, pp 27-40, issn 0151-9093Article

Chemistry of polymeric resistas useful in microlithographyLEDWITH, A.IEE proceedings. Part I. Solid-state and electron devices. 1983, Vol 130, Num 5, pp 245-251, issn 0143-7100Article

A negative, deep-UV resist for 248 nm lithographyO'TOOLE, M. M; DE GRANDPRE, M. P; FEELY, W. E et al.Journal of the Electrochemical Society. 1988, Vol 135, Num 4, pp 1026-1027, issn 0013-4651Article

PLASMA FORMATION OF BUFFER LAYERS FOR MULTILAYER RESIST STRUCTURESDOBKIN DM; CANTOS BD.1981; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1981; VOL. 2; NO 9; PP. 222-224; BIBL. 10 REF.Article

Plasma developable photoresist containing electronic excitation energy quenching systemTSUDA, M; OIKAWA, S; YOKOTA, A et al.Polymer engineering and science. 1983, Vol 23, Num 18, pp 993-999, issn 0032-3888Article

ENHANCEMENT OF RESIST PLASMA EROSION RATES BY ELECTRON-BEAM HARDENINGMORGAN RA; POLLARD CJ.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 24; PP. 1038-1040; BIBL. 2 REF.Article